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  Datasheet File OCR Text:
 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 5 - MARCH 2001 PARTMARKING DETAILS - BCW68F - BCW68G - BCW68H - DF DG DH BCW68FR - BCW68GR - BCW68HR - 7T 5T 7N
BCW68
C B
E
COMPLEMENTARY TYPES - BCW66
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current(10ms) Continuous Collector Current Base Current Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V CES V CEO V EBO I CM IC IB P tot T j:T stg VALUE -60 -45 -5 -1000 -800 -100 330 -55 to +150
SOT23
UNIT V V V mA mA mA mW C
TBA
BCW68
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter Breakdown Voltage
V (BR)CEO V (BR)CES
-45 -60 -5 -20 -10 -20 -0.3 -0.7
V
I CEO=-10mA IC=-10A
Emitter-Base Breakdown Voltage Collector-Emitter Cut-off Current Emitter-Base Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer BCW68F
V (BR)EBO I CES I EBO V CE(sat) V BE(sat) h FE h FE h FE fT C obo C ibo N
V nA A nA V V V
I EBO =-10A V CES =-45V VCES =-45V, Tamb=150C V EBO =-4V IC=-100mA, IB = -10mA IC= -500mA, IB =-50mA* IC=-500mA,IB=-50mA* IC=-100mA, VCE =-1V* IC=-500mA, VCE =-2V* IC=-100mA, VCE =-1V* IC=-500mA, VCE =-2V* IC=-100mA, VCE =-1V* IC=-500mA, VCE =-2V*
-2 100 35 160 60 250 100 100 170 250
BCW68G
250
400
BCW68H
350
630
Transition Frequency
MHz
I C =-20mA, V CE =-10V f = 100MHz V CB =-10V, f =1MHz V EB =-0.5V, f =1MHz I C= -0.2mA, V CE =- 5V R G =1K, f=1KH f=200Hz
Output Capacitance Input Capacitance Noise Figure
12
18 80
pF pF dB
2
10
Switching times: Turn-On Time Turn-Off Time
t on t off
100 400
ns ns
I C=-150mA I B1=- I B2 =-15mA R L=150
Spice parameter data is available upon request for this device *Measured under pulsed conditions.
TBA


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